NAVAL POSTGRADUATE SCHOOL Semiconductor Laser Experiments This section contains descriptions and explanations of a number of standard experiments which can be performed using the IPC Semiconductor Laser. infrared (IR) detectors. Analogue Electronics Lab. 14. Transistor Characteristics Lab 6. Free Space Optical Communication Link — elec2210 1.0 ... Characteristics of Thermistors 5. CBSE Class 12 Physics Lab Manual Common emitter BJT circuit for determining output characteristics To use them in an analog input circuit. 2367 1-6001 -tu-00 (nasa-cr-114733) feasibility test of a n74-1715 solid state spin-scan photo-imaging system (trw systems group) 192 p hc $12.75 THEORY: - AC servomotor has best use for low power control applications. phototransistors Electronics These cover the experimental determination of the velocity of light, the use of fibre optics and classic experiments with a double slit and diffraction grating experiment no. These desks can serve 10 to 20 students. phototransistors The main advantage of BJT and FET is that in electrical and electronics circuits, both devices can be used as switches and amplifiers. The lamp will be set at a fixed distance from the transistor By varying the lamp voltage, we can change its brightness and observe how the photodiode and phototransistor currents vary … Electrical Engineering Figure A-3 shows typical characteristics of a real diode. When the photodiode is forward biased, there is an exponential increase in the current. II. W/m 2 (for phototransistors LTR andallphotodiodes,BP ,BPW N,BPW ,and SFHFA). Fig. The experiments covered in the Lab Manual are: # Gain Characteristics of a FO Linear Intensity Modulation System: The phototransistor inside the sensor detects the reflected IR light. LAB Device researchers have worked on techniques for light detection and developed devices that offer excellent performance. A comprehensive system introducing the principles of electronics. I - V characteristics (current dependance on voltage) of these devices have been measured before … As the base of the phototransistor is exposed to infrared light, the base “closes” a switch between the collector and emitter. Solved I want you to write an Introduction about the light ... 4. https://www.johnloomis.org/ece445/topics/egginc/pt_char.html However the circuits are normally reliable and can easily be designed. Name Quantity Name Quantity 1 Transistor-npn BC 107 1(One) No. This paper presents the behavior of various optoelectronic devices after gamma irradiation. To demonstrate the use of opto-coupler as an insulating device. Keeping this mind, a Phototransistor is a Photojunction device (so, is Photodiode) that is similar to a regular transistor except that it has a light sensitive Base terminal (or Collector – Base Junction, to be precise). In other words, a photo transistor can be considered as a Photodiode with current amplifier. characteristics of the device. Lab Faculty: Er Sonmati Verma Lab Assistant: Mr Kunwar Singh Lab Staff: Mr Ram Gopal Lab Area: 875 Sqfeet Room Number: EC 108 Courses Covered REC 453-Electronics Instrumentation & Measurement Lab EC 454-Electronics Measurement Lab List of Experiments REC 453: ELECTRONIC MEASUREMENT & INSTRUMENTATION LAB 2 Application Note The response time is inversely proportional to the reverse bias voltage and is expressed as follows: r = Cj × RL Cj: junction capacitance of the photodiode RL: load resistor VD: diffusion potential (0.5 V - 0.9 V) VR: Reverse bias voltage (negative value) n: 2 - 3 . Using the solar cell provided, you will measure the I-V characteristics at two light illumination levels. Show screen shots of all I-V measurements, discuss the similarity of the measured photo transistor I-V with the 2N3904 I-V from previous lab experiments. DC Regulated Power supply (0 - 30 V) 2 (One) No. Examples of Optoelectronic Devices C. Experiments 1. ... Measure the voltage across the Resistor when the light is applied to the phototransistor and when it is kept OFF. Experiment No: 2 Common Emitter Configuration Characteristics Objective: To study the input and output characteristics of a transistor (Common Emitter configuration). The corresponding collector current I C is noted. The unit is basically a three layers semiconductor device, NPN, with three terminals: e(emitter), b (base) and c (collector). Radiative recombination 3. Often the applications are where a light beam is interrupted, but sometimes they can be used for light level detection. 2a and b shows the chemical structure and optical microscope image, respectively, of the PTCDI-C13-based phototransistor.The electrical characteristics of the PTCDI-C13-based phototransistor for the location of the incident light … These cover the experimental determination of the velocity of light, the use of fibre optics and classic experiments with a double slit and diffraction grating Connect a multimeter (in voltage read mode) across the terminals of the solar cell. The prototype achieved communication ranges in seawater of … The phototransistor should be smaller and have shorter leads, which is often a way that manufacturers identify them. We also customize the range understanding the need of customers and offer them at best price. The characteristics of a phototransistor include the following. Lab 5: Analog-to-Digital Converter (ADC) 1. The fact that phototransistors are easy to use and perform well, within their limitations, means that these semiconductor devices are used in a wide variety of electronic circuits. The Phototransistors are manufactured in the similar way by which normal transistor is manufactured, the only difference is the area of the base and collector region in case of phototransistors is quite large as compared to the normal transistor. COM3LAB Course: Electronic Components I. Phototransistor is a type of photoconductive device that conducts current when exposed to light. B E C VCE +-IC IE IB Figure 6. IC 212 SENSORS AND TRANSDUCERS LABORATORY EXPERIMENT - DOCUMENTATION SECOND YEAR- B.TECH DEPARTMENT OF INSTRUMENTATION AND CONTROL ENGINEERING SENSORS AND TRANSDUCER LAB SI.NO LIST OF EXPERIMENTS 1 Measurement of strain using strain gauges 2 Characteristics of temperature sensors 3 Study Of Ac And Dc Characteristics Of LVDT The circuit symbol of the phototransistor is described in the diagram below.. Construction of the Phototransistor. Component/ Equipment required: Component Equipment Sl. Double refraction 6. No. 20µA) by adjusting the rheostat Rh 1. Ideally, a diode is a device that allows current to flow in one direction only. The third terminal controls just how much current passes through the other two. Available in a wide range of packages including epoxy-coated, transfer-molded, and surface mounting technology. 3. Phototransistors can also be used in astronomy, night vision, and laser range-finding. The lens is the base. Read through the lab experiment to familiarize themselves with the components and assembly sequence. NR phototransistor. Phototransistor measurements will be made between the collector and emitter terminals of the device We will be using a small lamp as a light source. 2141274 Electrical and Electronic Laboratory Faculty of Engineering Chulalongkorn University Optoelectronic Devices (OD) Contents A. Photoconductive cell 2. This convention is not necessarily standard, although it is not 2. A disc with 20 holes is mounted on the motor shaft and when photo transistor and light source are properly aligned, every passage of hole across them produce a voltage pulse of high magnitude. Experiment No: 2 Common Emitter Configuration Characteristics Objective: To study the input and output characteristics of a transistor (Common Emitter configuration). The base current I B is kept constant (eg. The phototransistor is a type of photoelectric device consisting of a three-terminal device such as a bipolar transistor or a field-effect transistor. Construct and test the phototransistor (opto-isolator) as a switch. 1. STUDY THE OPTICAL (E-O) CHARACTERISTICS OF FIBER OPTIC 660nm CONVERTER 9 TRIANGULAR WAVE THROUGH THE OPTICAL FIBER ... come across while performing experiments in the lab. The base of the phototransistor is open (not connected – floating). Our product range is known for accuracy and durability. When a lamp filament get… View the full answer. Characteristics of Thermocouples 7. What to do in lab report. Phototransistor 3. In BJT, the Current-Voltage (I-V) characteristics are linear, but in FET, it is non-linear. Characteristics of capacitive transducer (i) Variable area (ii) Variable distance. The QRE1113 sensor consists of an IR emitting photo diode and an IR sensitive phototransistor. Conservation of charge yields Ib +Ic = Ie (3) PRODUCT ACCESSORIES. In this design, the formation of Calculate the ratio of forward mode collector current (at a higher VCE, e.g. Moderately fast response times. Introduction 1. In this lab, the IC 212 SENSORS AND TRANSDUCERS LABORATORY EXPERIMENT - DOCUMENTATION SECOND YEAR- B.TECH DEPARTMENT OF INSTRUMENTATION AND CONTROL ENGINEERING SENSORS AND TRANSDUCER LAB SI.NO LIST OF EXPERIMENTS 1 Measurement of strain using strain gauges 2 Characteristics of temperature sensors 3 Study Of Ac And Dc Characteristics Of LVDT Light with wavelength less than 1100 nm is absorbed in silicon and creates free hole-electron pairs. • Third, you measure the small current fluctuations due to shot noise from a phototransistor The Phototransistor Aim The aim of this experiment is to study the construction and characteristics of the phototransistor device and measure the phototransistor output voltage. Low-cost visible and near-IR photodetection. Results and Discussion - characteristics of optoelectronic devices before and a er the neutron irradiation are shown in Figure (solar Characteristics of RTD. The signal is provided by the instrument called IR_Laboratory.vi. Now the collector voltage is increased by adjusting the rheostat Rh 2. Purpose: The purpose of this laboratory is to become familiar with the D.C. operation of the bipolar junction transistor (BJT), and a basic D.C. circuit using the BJT, namely, the current mirror. 7. Phototransistors. KCT College of Engineering and Technology Department-EE Control System Lab 2 EXPERIMENT NO: 1 AIM:-To study AC servo motor and note it speed torque Characteristics. The experiment is repeated with V CE kept constant say 2V, 3V, 4V etc. Viva questions: 1. By drawing the individual characteristics curves one can identify the type of diode and photo detector used inside the IC. Phototransistors H. Xu, J. X. Wu, Q. L. Feng, N. N. Mao, Prof. J. Zhang Center for Nanochemistry Beijing National Laboratory for Molecular Sciences Key Laboratory for the Physics and Chemistry of Nanodevices State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering Peking University The Electronics System 1 is designed to be rugged and easy to use. Functionally, the phototransistor is very similar to the light-meter circuit we built and discussed previously As the photodiode resistance decreases, the base current of the transistor increases, and the collector current increases accordingly If an Ohmmeter were connected across the emitter and collector, it would see a decrease Name Quantity Name Quantity 1 Transistor-npn BC 107 1(One) No. Circuit Operation:- The electronic circuitry is same as magnetic pickup with an AC amplifier, Schmitt Build and test the circuit of Transistor as a Switch. Light is an electromagnetic radiation with a much shorter wavelength and higher frequency than radio waves. . Lab Experiment Manual x 1 3 Mains Power Cord x1 4. using phototransistor as sensing element. Figure 1: Schematic of an infrared detecting phototransistor. Introduction A phototransistor is a silicon semiconductor device with photosensitive base. Spare fuse x2. 1. 4. - Utmel 6. … Output characteristics. A number of PIN photodiodes, phototransistors, and solar panels have been exposed to gamma irradiation. Electronics System 1 has modular design: each block contains a fully functional electronic component, from a potentiometer to a photo resistor. III. 3. The ones in Figure 15, Everlight model ALS-PT243-3C/L177, have flat tops to differentiate them from LEDs. The most important characteristic of the BJT is the plot of the collector current, IC, versus the collector-emitter voltage, VCE, for various values of the base current, IB as shown on the circuit of Figure 6. will also feature in the characterization. project: the heart rate lab. As compared to BJT, FETs are faster switching devices. Measure the volt ampere characteristic and illumination characteristic of photodiode and phototransistor. 5. Band gap using four probe method 3. Semiconductor Laser Experiments This section contains descriptions and explanations of a number of standard experiments which can be performed using the IPC Semiconductor Laser. In addition to making photo junction devices from diodes, it is possible to construct a light sensor from transistors. Characteristics As we said, bipolar transistors have three terminals: base, emitter, and collector. These current carriers are swept out of the For example, a silicon diode has 0.6V forward voltage and LEDs of A light sens… Encoders where a rotating disc with light and dark stripes rotates - this gives speed and direction or rotation. Bipolar Junction Transistor Characterstics Experiment - #8 Kehali B. Haileselassie and Kou Vue 11/14/2013 ELC ENG 330 – Electronics I Fall 201 2. When there is no light falling on the phototransistor, a small amount of leakage current known as Dark Current flows from collector to emitter. When there is enough light falling on the base terminal, a base current is produced, which is proportional to the intensity of the light. Hall effect- determination of carrier density, Hall coefficient and mobility 4. SHU191 PHYSICS LAB L T P Cr 0 0 2 1 LIST OF EXPERIMENTS 1. Since this noise voltage is an AC source, you must rectify the signal, i.e., measure its RMS voltage. The phototransistor is a semiconductor light sensor formed from a basic transistor with a To investigate the drain characteristics of a MOSFET transistor. The system gain G 100 is approximately unity for Rin=100 ohms. For radiation, FET is good, while BJT is sensitive. good switching characteristics complex driving circuit and large driving power . We manufacture and supply Lab Trainer Kits at our manufacturing unit that has advanced tools and machines. A CutieBot uses five IR Lab Trainer Kits. Experiment Five 5.2- The Phototransistor The construction and basic circuit used are shown in the figure 1. Introduction 0.1 Tester LPS04 0.2 Optoelectronic Components 0.3 AC Performances and Communication Applications 0.4 ST Connectorised FO LEDs, PIN Diodes and Phototransistors 0.5 Data Sheets on FO Components/ Cables/ Power meter Module - characteristics have been performed for illumination levels of W/m 2 (for phototransistors BPW ), .W/m 2 (for solar panels), and . What are the Testing Method and Types of Transistors? They often look like LEDs. Plot measured phototransistor currents for the 1-meter and 3-meter lengths, and the calculated phototransistor currents for the 5- and 10-meter fiber lengths for all three LEDs in Figure 3.2. The parallel plate capacitance across the depletion region gives rise to a junction capacitance (C j) which increases with the area of the junction. 2.Characteristics of LVDT. The location-dependent characteristics for the incident light were also confirmed in the PTCDI-C13-based n-type phototransistor. Radical Scientific are Manufacturer of Angular Displacement Using Capacitive Pickup Trainer, Electronics, Physics Supplies ocean water using 100-W blue/green light emitting diodes (LED) with an array of phototransistors. Experiments Measure the volt ampere characteristic and illumination characteristic of silicon photocell and photoresistor. 3. Home/Labs/Viva Questions/FET FET 1.What are the comparisons and differences between a BJT and a JFET? Kit, the two devices look almost identical. How linearly the output varies according to the intensity of the light is an important consideration. Sensitivity of the phototransistor is the ratio of the output signal to the input intensity of the incident light. Also, how quickly the output responds to the changes in the intensity of the light will determine the response time. The students must know all the experiments and theorems, laws, and numerical to understand all the concepts of 12th standard physics in a detailed way. The short leg of a phototransistor is the emitter, and the long leg is the collector. We will explore a few concepts that you are likely to encounter in your heart rate project laboratory. When a reverse bias is A 2. photodiodes. The photodiode is made using two semiconductors like P-type & N-type. Electrical characteristics and the photoresponse of the phototransistors were tested using a semiconductor parameter analyzer (Agilent B1500) housed in the lab under dark and illumination conditions. Should learn the prelab questions. In case of sensors, additional quantities (such as temperature, light, sound, etc.) The analog signal is usually received from a sensor device such as microphone, temperature sensor, etc. Photodiode Characteristics n I-V CHARACTERISTICS The current-voltage characteristic of a photodiode with no incident light is similar to a rectifying diode. • Third, you measure the small current fluctuations due to shot noise from a phototransistor LED characteristics, phototransistor characteristics, coupled characteristics, and switching characteristics. 6. DC Regulated Power supply (0 - 30 V) 2 (One) No. Name: Alessandro Ottino SN:16077807 Tutor: Prof. Tony Kenyon Abstract The aim of this lab report is to analyse the different behaviours of CA3046 NPN transistors array in different configurations. The input diode will have the input forward voltage (I F) which depends on its material. Should take only the lab manual, calculator (if needed) and a pen or pencil to the work area. The circuit given in Fig. 2. Since this noise voltage is an AC source, you must rectify the signal, i.e., measure its RMS voltage. LED characteristics, phototransistor characteristics, coupled characteristics, and switching characteristics. Objectives B. Optoelectronics Photodiode/Phototransistor . 4. phototransistor and is directly proportional to it. Why is a JFET known as a Unipolar Device? Experiment cards characteristics: Dimensions: 220 x 180 mm Industrial 48 pin DIN connector The name "silicon controlled rectifier" or SCR is General Electric's trade name for a type of thyristor. Connect the terminals of the decade resistor box to the terminals of the solar cell. CBSE Physics Lab Manual for Class 12 is very reliable and trustable notes provided to the students to achieve good marks. The working principle of GTR is the same as that of ordinary bipolar junction transistors. 1. The AL7212 is designed for experimentation with analogue circuits in the laboratory. Table Table Transcribed image text: Introduction: State the purpose of the experiment in general terms. DC Characteristics of Fiber Optic LEDs, PIN Photodiode and Phototransistor LABORATORY MANUAL: TESTER LPS04 0. The monochromatic light used in the experiments was generated by a xenon lamp through a monochromator (Zolix, Omni-l 3009). Figuratively, a photo transistor is basically a combination of a photo diode and an amplification transistor. and corresponding graphs are plotted. For this experiment you should consider that in addition to the V = I R relation, carbon resistors also produce a very small Johnson noise voltage V j. It consists of photodiode followed by a transistor as shown in figure 1 below. The photodiode emits IR light that gets reflected back to the sensor when an object is in the light’s path.. Photodiode Characteristics To construct relation between the light falling on photodiode and current flowing through it. Silicon has a band gap around 1.1 eV. 1.Characteristics of resistance transducer (i) Potentiometer (ii) StrainGauge 2. characteristics. The basic concepts for the phototransistor circuits are quite straightforward. ELECTRONICS LABORATORY 5. The base of the phototransistor is open (not connected – floating). The base of a phototransistor is photosensitive. Download CBSE Class 12 Physics Lab Manual 2020-21 Session in PDF. Specifications Description Specifications Power supply Dc … These are used in various industrial applications and engineering colleges. The type of photosensors used in the lab is infrared detecting phototransistors ... in the Introduction to Microcontrollers experiment. Figure 1 The device differs to a transistor in that allows the light falls on the union collector-base. In the deficiency of light, BJT phototransistor allows leakage among collectors as well as an emitter of 100 nA otherwise low. Once this transistor is exposed to the beam, it performs upto 50mA. This distinguishes it from photodiode which cannot allow much current. They produce a higher current than photodiodes and also produce a voltage, something that photo resistors cannot do. 2. The phototransistor inside the sensor detects the reflected IR light. You will use the IR diode QED123 and the phototransistor QSD124 to transmit through the air and detect a certain signal. Thelonger lead on the phototransistor is the collector terminal and goes to the resistor. Component/ Equipment required: Component Equipment Sl. To construct relation between the light falling on phototransistor and current flowing through it. Phototransistors are available as two-leaded or three-leaded devices. LED (Light-Emitting Diode) K-12 projects, experiments & background information for lesson plans, class activities & science fair projects for middle and high school students and teachers. Construct and test the NPN transistor to obtain input and output characteristics in CE mode. Recording the characteristics of a phototransistor connected as a photodiode Show 10 20 50 per page VP4.1.7.1 Detection of light is a basic need for everything like plants, animals and even devices. Phototransistor. two important electrical characteristics of a photodiode: the junction capacitance and the shunt resistance. Objectives The objective of this lab is to show how the analog-to-digital converter (ADC, A/D, or A-to-D) chip can be used to convert an analog input signal to a digital data. 4. Typically they require little design, although some optimisation may be required to ensure residual current is minimised and in switching applications that the “off” current is small. Transistors characteristics are graphs of the various currents (Ibis current into the base, Ie is current out of the emitter, and Icis current into collector) and voltages. They are very fast and their output is practically instantaneous. The current-voltage characteristics are displayed on an oscilloscope for the unilluminated, weakly illuminated and fully illuminated states Spare fuse x2. … The QRE1113 sensor consists of an IR emitting photo diode and an IR sensitive phototransistor. At the detector end major components are photodetector (phototransistor in this lab) and phototransistor interface circuit which drives a particular load. APPARATUS REQUIRED:-AC Servo Motor Setup, Digital Multimeter and Connecting Leads. Photoconductive effect 2. Compared to the SCN −-capped phototransistors, the Sn 2 S 6 4−-capped phototransistors still exhibit low subthreshold slope (SS) and high mobility under Experiment 1. The photodiode … We recommend fixed resistance of 50, 100, 200, and 400 ohms to be used. Theory A photo transistor can be made to respond to light radiations and work as a sensor. The photodiode emits IR light that gets reflected back to the sensor when an object is in the light’s path. A transistor is like a valve that regulates the amount of electric current that passes through two of its three terminals. Lab Experiment Manual x 1 3 Mains Power Cord x1 4. 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